Type Transistor Silicon NPN
Case TO202
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 950m
C(ob) (F) 12p
Derate (Amb) (W/°C) 10m
hfe 70
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 200n
Polarity NPN
Trans. Freq (Hz) Min. 45M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 125
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.95 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 24 pF
Transition Frequency (ft): 22 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 395087
Case TO202
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 950m
C(ob) (F) 12p
Derate (Amb) (W/°C) 10m
hfe 70
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 200n
Polarity NPN
Trans. Freq (Hz) Min. 45M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 125
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.95 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 24 pF
Transition Frequency (ft): 22 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 395087